抄録
We have developed a digitally processed DC reactive sputtering (DPDRS) system that enables synthesis of arbitrarily designed atomically
precise deposition of metal oxide compounds. Pulsed-DC sputtering employing a digital pulse pattern generator can perform the temporally
alternating process of multiple metal sputtering and oxidation. High-speed switching of the pulsed-DC sputtering process driven by the
digital signal processing was confirmed from time-resolved plasma emission spectroscopy. Metal sputtering, which was temporally separated
from the oxidation process, resulted in a deposition rate higher than 1 μm/h. The DPDRS was applied to layer-by-layer synthesis of
(Er0.1Y0.9)2SiO5 (EYSO) films oriented to the ⟨100⟩ direction.
X-ray diffraction measurements indicated a formation of ⟨100⟩ highly oriented (Er0.1Y0.9)2SiO5 crystalline thin films. Photoluminescence
spectra and the decay characteristics also showed synthesis of high crystalline quality EYSO films better than those obtained by pulsed laser
deposition.