抄録
This study investigates the effects of different fabrication and annealing atmospheres on the properties of samarium (Sm)‐doped titanium dioxide (TiO2:Sm) thin films, with a focus on luminescence and electrical conductivity. TiO2:Sm thin films are deposited by laser ablation and annealed at 700 °C in O2 and H2 + N2 atmospheres. X‐ray diffraction analysis shows that fabrication and annealing in the H2 + N2 atmosphere significantly inhibit crystal growth. PL spectra reveal that films fabricated and annealed in O2 exhibit the strongest luminescence, while those in the H2 + N2 show quenched luminescence. X‐ray absorption fine structure results indicate that Sm3+ ions in the non‐luminescent samples have a high‐symmetry oxygen coordination, which is unfavorable for luminescence. C–V and I–V measurements reveal a substantial increase in electrical conductivity for films fabricated and annealed in H2 + N2, attributed to the incorporation of hydrogen and the formation of oxygen vacancies. This study concludes that while the fabrication and annealing in the H2 + N2 atmospheres enhance the electrical conductivity of TiO2:Sm thin films, they also degrade luminescence. Balancing luminescence intensity and electrical conductivity is crucial for the optical device application of TiO2:Sm thin films. It is necessary to carefully adjust the fabrication and annealing conditions to enhance electrical conductivity while maintaining strong luminescence.