抄録
Abstract
This study investigates spin-splitter torque (SST) for magnetization switching in nanoscale magnets with perpendicular anisotropy, aiming to reduce current requirements in magnetic memory devices. A micromagnetic model shows that optimizing the spin polar angle ( ) can lower the threshold current density by 1.6–27 times compared to the traditional spin–orbit torque method. A above ∼134° ensures high switching probability, while tailoring the current pulse shape cuts switching error rates by about 200 times. The findings highlight SST’s promise for energy-efficient and reliable switching in future magnetic random-access memory (MRAM) technologies.