抄録
Abstract
A simulation model of in-plane strong electronic coupling between adjacent quantum dots (QDs) was presented to verify the peculiar temperature dependence of photoluminescence (PL) energy in InAs ultrahigh-density (UHD) QDs. In this model, we focused temperature dependence of homogeneous broadening of QD energy levels and calculated the transition to in-plane QD strong coupling by using square mesh patterns of (100 × 100) QDs and experimental data on PL spectra and inter-QD nearest neighbor distance distribution. InAs UHD QDs were grown on GaAs substrates by molecular beam epitaxy. The temperature dependence of the PL energy of UHD QDs could be explained by the in-plane strong coupling model on the low-energy side of the QD energy spectrum, but it was found that the carrier redistribution effect also needs to be taken into account on the high-energy side of the spectrum. The presented simulation model is useful for predicting the in-plane strong coupling of QDs.