抄録
Offer Organization: Japan Society for the Promotion of Science, System Name: Grants-in-Aid for Scientific Research, Category: Grant-in-Aid for Scientific Research (B), Fund Type: -, Overall Grant Amount: - (direct: 6300000, indirect: -)
The aim of the research program is to develop international collaboration of education and research on nano-structured semiconductor materials and devices between Griffith University Group (GUG headed by Professor Barry Harrison) and our group (UECG). We have invited twice Mr. J.Combes, a post-graduate student of GUG as an : exchange student, who has made excellent contribution to the progress of the research on the semiconductor position sensitive detector. As a research interchange between GUG and UECG, several academic staffs from both. Universities have visited each other to develop nana-structured semiconductor devices using various semiconductor process facilities in both Universities. We have developed the position sensitive devices using a current-dividing resistor composed of granular metal as well as many GalnP/GaAs photo-detectors. We: have also investigated the phase transformation induced by nano-structuring of semiconductors.' In addition to the discovery of the new phase of nano-structured Ge, we have also found that nano-structured Si can transform to the Wurzite structure, a high-pressure form of crystalline Si. The stability of the high-pressure forms of crystalline Ge have been studied by applying hydrostatic pressure as high as 10GPa. The cluster-size in nano-structured Ge films deposited by the cluster-beam evaporation technique becomes very uniform by the photo-oxidation. We have found that the photo-oxidized Ge films can show the coulomb blockade effect even at the room temperature. The possible single electron devices using this phenomenon has been discussed in both UECG and GUG.