抄録
Offer Organization: Japan Society for the Promotion of Science, System Name: Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Category: Grant-in-Aid for Scientific Research (B), Fund Type: -, Overall Grant Amount: - (direct: 15000000, indirect: 4500000)
A combined experimental and theoretical study on the incorporation of Mn in GaAs has been presented. We have successfully controlled the location of Mn atoms at GaAs(001) surfaces by changing the surface atomic geometry. While Mn atoms prefer to substitute Ga sites at a subsurface layer under the As-rich conditions, the incorporation into interstitial sites becomes more favorable as the surface As coverage is decreased. The present results provide a mechanism for the enhanced incorporation of substitutional Mn atoms in GaMnAs under low-temperature (i.e., As-rich) growth conditions.