専門
1966年－1971年 (at University of Tokyo)
1. High-speed optoelectronic digital devices
1971年- (at University of electro-Communications)
2. Electronic States of graphite
3. Ion implantation of chemical compound semiconductors: defect evaluation, interdiffusion at the interface, controle of properties
4. Synthesis of SiC by C ion implantation into Si
5. Vapor phase growth of BP
6. Developent of thermoelectric semiconductor materials
7. Evaluation of properties of GaAs grwon at low temperatures by MBE (at Fraunhofer IAF, Freiburg)
8. Luminescence of rare-earth-doped semiconductors
9. Luminescence of rare-earth-doped silicon, silicon photonics
10. Vapor growth diamond: nulceus growth mechnaisms, impurity doping and electrical evaluation, coating of hard alloys, field emission and cathodeluminescnece
11. Failure physics of LSI
1. High-speed optoelectronic digital devices
1971年- (at University of electro-Communications)
2. Electronic States of graphite
3. Ion implantation of chemical compound semiconductors: defect evaluation, interdiffusion at the interface, controle of properties
4. Synthesis of SiC by C ion implantation into Si
5. Vapor phase growth of BP
6. Developent of thermoelectric semiconductor materials
7. Evaluation of properties of GaAs grwon at low temperatures by MBE (at Fraunhofer IAF, Freiburg)
8. Luminescence of rare-earth-doped semiconductors
9. Luminescence of rare-earth-doped silicon, silicon photonics
10. Vapor growth diamond: nulceus growth mechnaisms, impurity doping and electrical evaluation, coating of hard alloys, field emission and cathodeluminescnece
11. Failure physics of LSI
リンク
表彰
提携機関
教育
電子工学専攻, Graduate School, Division of Engineering | 工学系研究科, 電子工学専攻
03/1971, The University of Tokyo | 東京大学
電子工学専攻, Graduate School, Division of Engineering | 工学系研究科, 電子工学専攻
03/1968, The University of Tokyo | 東京大学
電子工学科, Faculty of Engineering | 工学部, 電子工学科
03/1966, The University of Tokyo | 東京大学