研究業績リスト
ジャーナル論文 - rm_published_papers: Scientific Journal
公開済 01/12/2025
Physical Review Letters
ジャーナル論文 - rm_published_papers: Scientific Journal
公開済 07/2025
Advanced science (Weinheim, Baden-Wurttemberg, Germany), 12, 27, e2501669
Nodal-line semimetals are a class of topological materials hosting one dimensional lines of band degeneracy. Kramers nodal-line (KNL) metals/semimetals have recently been theoretically recognized as a class of topological states inherent to all non-centrosymmetric achiral crystal lattices. The electronic structure of candidate KNL semimetal YAuGe is investigated by angle-resolved photoemission spectroscopy (ARPES) and quantum oscillations as well as by density functional theory (DFT) calculations. DFT has revealed that YAuGe hosts KNLs on the Γ-A-L-M plane of the Brillouin zone, that are protected by the time reversal and mirror-inversion symmetries. Through ARPES and quantum oscillations, signatures of hole bands enclosing the Γ point are identified, and the observed splitting of quantum oscillation frequency with angle is attributed to spin-orbit-coupling-induced band splitting away from the KNLs. Furthermore, it is shown that the degeneracy of the nodal lines along the Γ-A line is lifted by the time-reversal-symmetry breaking when the Y is substituted by magnetic R ions (R = rare earth). This becomes a source of Berry curvature and contributes to the anomalous Hall effect in magnetic RAuGe. These findings establish RAuGe as a new class of KNL semimetals offering significant potential for engineering of anomalous magnetotransport properties via magnetic rare-earth substitution.
ジャーナル論文 - rm_misc: Others
公開済 10/05/2025
Vacuum and Surface Science, 68, 5, 283 - 288
ジャーナル論文 - rm_published_papers: Scientific Journal
Dimensionality-driven power-law gap in the bilayer TaTe2 grown by molecular-beam epitaxy
公開済 01/07/2024
APL Materials, 12, 7
Reducing dimensionality can induce profound modifications to the physical properties of a system. In two-dimensional TaS2 and TaSe2, the charge-density wave phase accompanies a Mott transition, thus realizing the strongly correlated insulating state. However, this scenario deviates from TaTe2 due to p–d hybridization, resulting in a substantial contribution of Te 5p at the Fermi level. Here, we show that, differently from the Mott insulating phase of its sister compounds, bilayer TaTe2 hosts a power-law (V-shaped) gap at the Fermi level reminiscent of a Coulomb gap. It suggests the possible role of unscreened long-range Coulomb interactions emerging in lowered dimensions, potentially coupled with a disordered short-range charge-density wave. Our findings reveal the importance of long-range interactions sensitive to interlayer screening, providing another venue for the interplay of complex quantum phenomena in two-dimensional materials.
ジャーナル論文 - rm_published_papers: Scientific Journal
180 °-twisted bilayer ReSe2 as an artificial noncentrosymmetric semiconductor
公開済 03/06/2024
Physical Review Research
ジャーナル論文 - rm_published_papers: Scientific Journal
公開済 09/02/2024
Physical Review Research
ジャーナル論文 - rm_published_papers: Scientific Journal
Ultrafast control of the crystal structure in a topological charge-density-wave material
公開済 22/11/2023
Physical Review B
ジャーナル論文 - rm_published_papers: Scientific Journal
Symmetry Engineering in Twisted Bilayer WTe2
公開済 25/10/2023
Nano Letters
ジャーナル論文 - rm_misc: Meeting Report
公開済 09/2023
JSAP-Optica Joint Symposia 2023 Abstracts, 20p_A602_1 - 20p_A602_1
The physical properties of atomically-thin, two-dimensional (2D) materials drastically change as the number of layers decreases towards the monolayer limit. The quantization of band dispersions along the stacking direction, as well as the reduction of symmetry compared to the infinite bulk crystal, can significantly modify the electronic structures of 2D materials, resulting in peculiar physical phenomena.
ジャーナル論文 - rm_published_papers: Scientific Journal
Charge transport and thermopower in the electron-doped narrow gap semiconductor Ca1−xLaxPd3O4
公開済 11/08/2023
Physical Review Materials